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| MITSUBISHI SEMICONDUCTOR MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. O U TLIN E D R AW IN G U nit:m illim eters (inches) 24 +/- 0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. 2 M IN (1 ) R 1.2 0.6 +/- 0.15 1 7 .4 +/- 0 .2 8 .0 +/- 0 .2 (2 ) 2 M IN (3 ) 20.4 +/- 0.2 0 .1 +/- 0 .0 5 QUALITY GRADE IG 4 .3 +/- 0 .4 item 01 : 6.4-7.2 GHz band power amplifier item 51 : 6.4-7.2 GHz band digital radio communication 16.7 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8.0 (A) RG=25 (ohm) 1 .4 G F -38 (Ta=25 deg.C) Ratings -15 -15 25 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C (1 ) G AT E (2 ) S O U R C E (F IAN G E ) (3 ) D R AIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25 deg.C ELECTRICAL CARACTERISTICS Symbol IDSS Gm Parameter Saturated drain current Transconductance (Ta=25 deg.C) Test conditions Min. VDS=3V, VGS=0V VDS=3V, ID=6.4A VDS = 3V , ID = 120mA 44.5 VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz 7 Limits Typ. 24 8 45 8 35 -45 Max. -5 1.0 A V V dBm dB % dBc deg.C/W Unit VGS(off) Gate to source cut-off voltage Output power at 1dB gain P1dB compression GLP Linear power gain PAE IM3 Power added efficiency 3rd order IM distortion *1 *2 -42 Delta Vf method - Rth(ch-c) Thermal resistance *1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 2 .4 +/- 0 .2 APPLICATION MITSUBISHI SEMICONDUCTOR MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB ,GLP vs. f 47 OUTPUT POWER P1dB (dBm) Po , PAE vs. Pin 12 50 VDS=10(V) IDS=8(A) f=6.8(GHz) 45 OUTPUT POWER Po(dBm) Po 50 VDS=10(V) IDS=8(A) 46 P1dB 11 40 POWER ADDED EFFICIECY PAE (%) 45 10 LINEAR POWER GAIN GLP(dB) 40 30 GLP 44 9 35 PAE 20 43 8 30 10 42 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 FREQUENCY f(GHz) 7 25 20 25 30 35 40 45 0 INPUTPOWER Pin(dBm) Po,IM3 vs.Pin 44 OUTPUT POWER Po (dBm S.C.L.) 40 36 32 28 VDS=10(V) IDS=8(A) f=7.2(GHz) Delta f=10(MHz) 0 Po -10 -20 -30 -40 -50 -60 -70 24 20 16 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin (dBm S.C.L.) S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A) f (GHz) 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 S11 Angle(deg.) 100 84 70 57 42 27 12 1 -10 S Parameters (TYP.) S21 Angle(deg.) Magn. -106 0.057 -122 0.065 -138 0.071 -154 0.079 -170 0.088 173 0.095 155 0.101 143 0.105 123 0.109 S12 Angle(deg.) -171 174 160 145 131 116 100 88 70 S22 Angle(deg.) 74 64 52 40 27 12 -8 -27 -61 Magn. 0.66 0.61 0.56 0.50 0.43 0.35 0.24 0.15 0.01 Magn. 2.39 2.43 2.47 2.54 2.59 2.66 2.73 2.75 2.72 IM3 (dBc) IM3 Magn. 0.32 0.34 0.35 0.35 0.34 0.31 0.27 0.24 0.20 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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